Facility Name:Cypress Semiconductor
Facility Identifier:
Facility Reporting Year:2023
Facility Location:
Address: 5204 EAST BEN WHITE BLVD
City: AUSTIN
State: TX
Postal Code: 78741

Facility Site Details:
CO2 equivalent emissions from facility subparts C-II, SS, and TT (metric tons):74,831.5
CO2 equivalent emissions from supplier subparts LL-QQ (metric tons):
Biogenic CO2 emissions from facility subparts C-II, SS, and TT (metric tons):0
Cogeneration Unit Emissions Indicator:N
GHG Report Start Date:2023-01-01
GHG Report End Date:2023-12-31
Description of Changes to Calculation Methodology:
Plant Code Indicator:N
Primary NAICS Code:334413
Second Primary NAICS Code:

Parent Company Details:
Parent Company Name:CYPRESS SEMICONDUCTOR CORP
Address:198 Champion Ct, San Jose,  CA 95134
Percent Ownership Interest:100

Subpart C: General Stationary Fuel Combustion

Gas Information Details

Gas NameCarbon Dioxide
Gas Quantity97.9 (Metric Tons)
Own Result?

Gas NameBiogenic Carbon dioxide
Gas Quantity0 (Metric Tons)
Own Result?

Gas NameMethane
Gas Quantity0 (Metric Tons)
Own Result?

Gas NameNitrous Oxide
Gas Quantity0 (Metric Tons)
Own Result?

Unit Details:
Unit Name : GP-Site
Unit Description :
Small Unit Aggregation Details:
Use Ivt Indicator: N
Highest Maximum Rated Heat Input Capacity: 28.576
Cumulative Maximum Rated Heat Input Capacity: 28.576

Emission Details:
Annual CO2 mass emissions from sorbent: 0 (Metric Tons)
Annual Biogenic CO2 Emissions: 0 (metric tons)
Annual Fossil fuel based CO2 Emissions: 0 (metric tons)

Tier Fuel Details:
Fuel : Natural Gas (Weighted U.S. Average)
Tier Name : Tier 1 (Equation C-1)
Tier Methodology Start Date : 2023-01-01
Tier Methodology End Date : 2023-12-31

Fuel Emission Details :
Total CO2 emissionsTotal CH4 emissionsTotal N2O emissionsTotal CH4 emissions CO2eTotal N2O emissions CO2e
84.8 (Metric Tons) 0.00 (Metric Tons) 0.000 (Metric Tons) 0 (Metric Tons) 0 (Metric Tons)

Equation C1/C8 Inputs :
Fuel Quantity : 1558560 (scf/year)

Fuel : Distillate Fuel Oil No. 2
Tier Name : Tier 1 (Equation C-1)
Tier Methodology Start Date : 2023-01-01
Tier Methodology End Date : 2023-12-31

Fuel Emission Details :
Total CO2 emissionsTotal CH4 emissionsTotal N2O emissionsTotal CH4 emissions CO2eTotal N2O emissions CO2e
13.1 (Metric Tons) 0.00 (Metric Tons) 0.000 (Metric Tons) 0 (Metric Tons) 0 (Metric Tons)

Equation C1/C8 Inputs :
Fuel Quantity : 1284 (gallons/year)


Subpart I: Electronics Manufacturing

Gas Information Details

Gas NameNitrous Oxide
Gas Quantity30.865 (Metric Tons)
Own Result?

Gas NameOther
Other Gas NameHFE-7300 (1,1,1,2,2,3,4,5,5,5-decafluoro-3-methoxy-4-trifluoromethyl-pentane)
Other Gas CAS Registry Number132182-92-4
Other Gas Linear Chemical FormulaCF3CF2CF(OCH3)CF(CF3)2
Other Gas GHG GroupSaturated HFEs and HCFEs with 3 or more carbon-hydrogen bonds
Gas Quantity0.15 (Metric Tons)
Own Result?

Gas NameOther
Other Gas NameHFE-7500 (3-ethoxy-1,1,1,2,3,4,4,5,5,6,6,6-dodecafluoro-2-trifluoromethyl-hexane)
Other Gas CAS Registry Number297730-93-9
Other Gas Linear Chemical FormulaCF3CF2CF2CF(OC2H5)CF(CF3)2
Other Gas GHG GroupSaturated HFEs and HCFEs with 3 or more carbon-hydrogen bonds
Gas Quantity0.012 (Metric Tons)
Own Result?

Gas NamePFC-14 (Perfluoromethane)
Gas CAS Registry Number75-73-0
Gas Linear Chemical FormulaCF4
Gas Quantity3.527 (Metric Tons)
Own Result?

Gas NameHFC-23
Gas CAS Registry Number75-46-7
Gas Linear Chemical FormulaCHF3
Gas Quantity0.655 (Metric Tons)
Own Result?

Gas NameHFC-41
Gas CAS Registry Number593-53-3
Gas Linear Chemical FormulaCH3F
Gas Quantity0.183 (Metric Tons)
Own Result?

Gas NamePerfluorobuta-1,3-diene
Gas CAS Registry Number685-63-2
Gas Linear Chemical FormulaCF2=CFCF=CF2
Gas Quantity0.018 (Metric Tons)
Own Result?

Gas NamePerfluorocyclobutane
Gas CAS Registry Number115-25-3
Gas Linear Chemical FormulaC-C4F8
Gas Quantity0.543 (Metric Tons)
Own Result?

Gas NameNitrogen trifluoride
Gas CAS Registry Number7783-54-2
Gas Linear Chemical FormulaNF3
Gas Quantity0.845 (Metric Tons)
Own Result?

Gas NamePFC-116 (Perfluoroethane)
Gas CAS Registry Number76-16-4
Gas Linear Chemical FormulaC2F6
Gas Quantity0.231 (Metric Tons)
Own Result?

Gas NamePFC C-1418
Gas CAS Registry Number559-40-0
Gas Linear Chemical Formulac-C5F8
Gas Quantity0.009 (Metric Tons)
Own Result?

Gas NameSulfur hexafluoride
Gas CAS Registry Number2551-62-4
Gas Linear Chemical FormulaSF6
Gas Quantity0.297 (Metric Tons)
Own Result?


Subpart I Fab Details (for Fab25):
Unique Name/IdentifierFab25
Optional Description
What does the fab manufacture? [§98.96]Semiconductor
Method used to calculate f-GHG emissions for this fab from the plasma etch/wafer clean and chamber clean process types [§98.96(d)]DefaultEmissionFactors
Does the fab have abatement systems (as defined in 98.98) through which F-GHG or N2O flow?Yes
Is the fab claiming destruction or removal efficiency for those abatement systems (as defined in 98.98) at the fab? [§98.96(p)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (Greater than 300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (200 mm) [§98.96(b)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (150 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (Less than 150 mm) [§98.96(b)]No
List the Specific Wafer Size(s) Less than 150mm Manufactured at this Fab [§98.96(b)]
Annual Manufacturing Capacity at this Fab used in Equation I-5 (square meters) [§98.96(a)]
Annual production for this fab in terms of substrate surface area (e.g., silicon, PV-cell, glass) (square meters) [§98.96(e)]
Do the emissions for this fab include emissions from research and development activities, as defined in 98.6?Yes
What is the approximate percentage of total GHG emissions, on a metric ton CO2e basis, that are attributable to research and development activities? [§98.96(x)]less than 5 percent
What is the effective fab-wide destruction or removal efficiency value calculated using Equations I-26, I-27 and I-28, as appropriate? (decimal fraction) [§98.96(r)]0.038
What method was used for this fab to develop the apportioning factors for fluorinated GHG and N20 consumption? [§98.96(m)(1)]
Optional description of your system and method(s) used in the fab-specific apportioning model
Description of quantifiable metric used in engineering model to apportion gas consumption [§98.96(m)(1)]
Start date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2023-01-01
End date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2023-12-31
Certification that the gas(es) selected under 98.94(c)(2)(ii) for this fab corresponds to the largest quantity(ies) consumed, on a mass basis, of fluorinated GHG used at the fab in the reporting year which the facility is required to apportion. Note that if you compare the actual gas consumed to the modeled gas consumed for two fluorinated GHGs, you must certify that one of the fluorinated GHGs selected for comparison corresponds to the largest quantity consumed, on a mass basis, of fluorinated GHGs used at the fab that requires apportionment during the reporting year. [§98.96(m)(3)]NotCertified
Reason for "not certified" selection (optional)
Result of calculation comparing actual and modeled gas consumption under §98.94(c)(2)(v) (the percent difference between actual and modeled gas consumption, relative to actual gas consumption). [§98.96(m)(4)]11
If you are required to apportion f-GHG consumption between fabs, as required by 98.94(c)(2)(v), certification that the gas(es) you selected under §98.94(c)(2)(ii) correspond(s) to the largest quantities consumed on a mass basis, of f-GHG used at your facility during the reporting year for which you are required to apportion. [§98.96(m)(5)]NotCertified
Reason for "not certified" selection (optional)


N2O Emissions Details
Method of reporting N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(d)]Used default utilization factor from Table I-8
Total annual N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(c)(3)]30.865
Method of reporting N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(d)]Did not use N2O in other electronics manufacturing processes
Total annual N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(c)(3)]


Substrate Types Details
Substrate Type
"Other" Substrate Type
The Annual production in terms of substrate surface area for each fab (square meters) [§98.96(e)]


F-GHG Emissions Details
Unique Name/IdentifierHFC-23
Chemical Formula [98.96(c)(1)]CHF3
Cas Number [98.96(c)(1)]75-46-7
Gas Category [98.96(c)(1)]
Gas NameHFC-23
Gas Description
Cas Number75-46-7
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.655
Unique Name/IdentifierHFC-41
Chemical Formula [98.96(c)(1)]CH3F
Cas Number [98.96(c)(1)]593-53-3
Gas Category [98.96(c)(1)]
Gas NameHFC-41
Gas Description
Cas Number593-53-3
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.183
Unique Name/IdentifierNitrogen trifluoride
Chemical Formula [98.96(c)(1)]NF3
Cas Number [98.96(c)(1)]7783-54-2
Gas Category [98.96(c)(1)]
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.675
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.033
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - remote plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.137
Unique Name/IdentifierPerfluorobuta-1,3-diene
Chemical Formula [98.96(c)(1)]CF2=CFCF=CF2
Cas Number [98.96(c)(1)]685-63-2
Gas Category [98.96(c)(1)]
Gas NamePerfluorobuta-1,3-diene
Gas Description
Cas Number685-63-2
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.018
Unique Name/IdentifierPerfluorocyclobutane
Chemical Formula [98.96(c)(1)]C-C4F8
Cas Number [98.96(c)(1)]115-25-3
Gas Category [98.96(c)(1)]
Gas NamePerfluorocyclobutane
Gas Description
Cas Number115-25-3
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.103
Gas NamePerfluorocyclobutane
Gas Description
Cas Number115-25-3
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.440
Unique Name/IdentifierPFC C-1418
Chemical Formula [98.96(c)(1)]c-C5F8
Cas Number [98.96(c)(1)]559-40-0
Gas Category [98.96(c)(1)]
Gas NamePFC C-1418
Gas Description
Cas Number559-40-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.009
Unique Name/IdentifierPFC-116 (Perfluoroethane)
Chemical Formula [98.96(c)(1)]C2F6
Cas Number [98.96(c)(1)]76-16-4
Gas Category [98.96(c)(1)]
Gas NamePFC-116 (Perfluoroethane)
Gas Description
Cas Number76-16-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.231
Unique Name/IdentifierPFC-14 (Perfluoromethane)
Chemical Formula [98.96(c)(1)]CF4
Cas Number [98.96(c)(1)]75-73-0
Gas Category [98.96(c)(1)]
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]2.091
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.11
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypeChamber cleaning - remote plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]1.326
Unique Name/IdentifierSulfur hexafluoride
Chemical Formula [98.96(c)(1)]SF6
Cas Number [98.96(c)(1)]2551-62-4
Gas Category [98.96(c)(1)]
Gas NameSulfur hexafluoride
Gas Description
Cas Number2551-62-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.297


F-HTF Emissions Details
F-HTF [§98.96(c)(4)]HFE-7300 (1,1,1,2,2,3,4,5,5,5-decafluoro-3-methoxy-4-trifluoromethyl-pentane)
Chemical Formula [§98.96(c)(4)]CF3CF2CF(OCH3)CF(CF3)2
Cas Number [§98.96(c)(4)]132182-92-4
F-HTF Category [§98.96(c)(4)]Saturated HFEs and HCFEs with 3 or more carbon-hydrogen bonds
Total Annual Emissions (metric tons) [§98.96(c)(4)]0.15
Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)]No
How many times were missing data procedures followed in this reporting year? [§98.96(s)]0
What method was used to estimate the missing data? [§98.96(s)]
F-HTF [§98.96(c)(4)]HFE-7500 (3-ethoxy-1,1,1,2,3,4,4,5,5,6,6,6-dodecafluoro-2-trifluoromethyl-hexane)
Chemical Formula [§98.96(c)(4)]CF3CF2CF2CF(OC2H5)CF(CF3)2
Cas Number [§98.96(c)(4)]297730-93-9
F-HTF Category [§98.96(c)(4)]Saturated HFEs and HCFEs with 3 or more carbon-hydrogen bonds
Total Annual Emissions (metric tons) [§98.96(c)(4)]0.012
Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)]No
How many times were missing data procedures followed in this reporting year? [§98.96(s)]0
What method was used to estimate the missing data? [§98.96(s)]


Abatement Systems Details
Abatement System Name/IdentifierGDC107
Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)]
Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)]
Certification in accordance with planCertified


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-23
DRE Claimed Gas CAS Number75-46-7


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-41
DRE Claimed Gas CAS Number593-53-3


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameNitrogen trifluoride
DRE Claimed Gas CAS Number7783-54-2


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Site-Specific Measured DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorobuta-1,3-diene
DRE Claimed Gas CAS Number685-63-2


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorocyclobutane
DRE Claimed Gas CAS Number115-25-3


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC C-1418
DRE Claimed Gas CAS Number559-40-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-116 (Perfluoroethane)
DRE Claimed Gas CAS Number76-16-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-14 (Perfluoromethane)
DRE Claimed Gas CAS Number75-73-0


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameSulfur hexafluoride
DRE Claimed Gas CAS Number2551-62-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameN2O
DRE Claimed Gas CAS Number10024-97-2


Process Type/Sub-TypeChemical Vapor Deposition
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Site-Specific Measured DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions