CO2 equivalent emissions from facility subparts C-II, SS, and TT (metric tons):139,671.2
CO2 equivalent emissions from supplier subparts LL-QQ (metric tons):
Biogenic CO2 emissions from facility subparts C-II, SS, and TT (metric tons):0
Cogeneration Unit Emissions Indicator:N
GHG Report Start Date:2020-01-01
GHG Report End Date:2020-12-31
Description of Changes to Calculation Methodology:Broadcom hired an expert consultant to assist with calculations and process types, this resulted in identifying several errors in past reports. Broadcom will be revising past reports with the correct data.
Did you use an EPA-approved BAMM in this reporting year for Subpart I?
Plant Code Indicator:N
Primary NAICS Code:334413
Second Primary NAICS Code:
Parent Company Details:
Parent Company Name:BROADCOM INC
Address:1320 Ridder Park Drive,
San Jose,
CA 59131
Percent Ownership Interest:100
Subpart C: General Stationary Fuel Combustion
Gas Information Details
| Gas Name | Carbon Dioxide |
| Gas Quantity | 13,949 (Metric Tons) |
| Own Result? | |
| Gas Name | Biogenic Carbon dioxide |
| Gas Quantity | 0 (Metric Tons) |
| Own Result? | |
| Gas Name | Methane |
| Gas Quantity | 0.26 (Metric Tons) |
| Own Result? | |
| Gas Name | Nitrous Oxide |
| Gas Quantity | 0.027 (Metric Tons) |
| Own Result? | |
Unit Details:
Unit Name : Building 4 Generator
Unit Type : RICE (Reciprocating internal combustion engine)
Unit Description :
Individual Unit Details:
Use Ivt Indicator: N
Maximum Rated Heat Input Capacity:
139
(mmBtu/hr)
Emission Details:
Annual CO2 mass emissions from sorbent: 0 (Metric Tons)
Annual Biogenic CO2 Emissions:
0
(metric tons)
Tier Fuel Details:
Fuel :
Distillate Fuel Oil No. 2
Tier Name :
Tier 1 (Equation C-1)
Tier Methodology Start Date :
2020-01-01
Tier Methodology End Date :
2020-12-31
Fuel Emission Details :
| Total CO2 emissions | Total CH4 emissions | Total N2O emissions | Total CH4 emissions CO2e | Total N2O emissions CO2e |
|
70.0
(Metric Tons)
|
0.00
(Metric Tons)
|
0.001
(Metric Tons)
|
0.1
(Metric Tons)
|
0.2
(Metric Tons)
|
Equation C1/C8 Inputs :
Fuel Quantity :
6859
(gallons/year)
Unit Name : CP-from local utility
Unit Type : OCS (Other combustion source)
Unit Description :
Other Unit Name :
Common Pipe Details:
Use Ivt Indicator: Y
Maximum Rated Heat Input Capacity:
33.5
Cumulative Maximum Rated Heat Input Capacity:
99.7
Emission Details:
Annual Biogenic CO2 Emissions:
0
(metric tons)
Annual Fossil fuel based CO2 Emissions:
13893.3
(metric tons)
Tier Fuel Details:
Fuel :
Natural Gas (Weighted U.S. Average)
Tier Name :
Tier 1 (Equation C-1b, natural gas billing in mmBtu)
Tier Methodology Start Date :
2020-01-01
Tier Methodology End Date :
2020-12-31
Fuel Emission Details :
| Total CO2 emissions | Total CH4 emissions | Total N2O emissions | Total CH4 emissions CO2e | Total N2O emissions CO2e |
|
13879.0
(Metric Tons)
|
0.26
(Metric Tons)
|
0.026
(Metric Tons)
|
6.5
(Metric Tons)
|
7.8
(Metric Tons)
|
Subpart I: Electronics Manufacturing
Gas Information Details
| Gas Name | Nitrous Oxide |
| Gas Quantity | 13.999 (Metric Tons) |
| Own Result? | |
| Gas Name | Nitrogen trifluoride |
| Gas CAS Registry Number | 7783-54-2 |
| Gas Linear Chemical Formula | NF3 |
| Gas Quantity | 0.0171 (Metric Tons) |
| Own Result? | |
| Gas Name | Perfluorocyclobutane |
| Gas CAS Registry Number | 115-25-3 |
| Gas Linear Chemical Formula | C-C4F8 |
| Gas Quantity | 0.0106 (Metric Tons) |
| Own Result? | |
| Gas Name | Other |
| Other Gas Name | FC-770 (Perfluoroisopropylmorpholine) |
| Other Gas CAS Registry Number | 1093615-61-2 |
| Other Gas Linear Chemical Formula | C5F15NO |
| Other Gas GHG Group | Fully fluorinated GHGs |
| Gas Quantity | 1.338 (Metric Tons) |
| Own Result? | |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas CAS Registry Number | 75-73-0 |
| Gas Linear Chemical Formula | CF4 |
| Gas Quantity | 1.2581 (Metric Tons) |
| Own Result? | |
| Gas Name | PFC-116 (Perfluoroethane) |
| Gas CAS Registry Number | 76-16-4 |
| Gas Linear Chemical Formula | C2F6 |
| Gas Quantity | 0.9352 (Metric Tons) |
| Own Result? | |
| Gas Name | Sulfur hexafluoride |
| Gas CAS Registry Number | 2551-62-4 |
| Gas Linear Chemical Formula | SF6 |
| Gas Quantity | 3.803 (Metric Tons) |
| Own Result? | |
| Gas Name | PFC C-1418 |
| Gas CAS Registry Number | 559-40-0 |
| Gas Linear Chemical Formula | c-C5F8 |
| Gas Quantity | 0.0007 (Metric Tons) |
| Own Result? | |
| Gas Name | HFC-23 |
| Gas CAS Registry Number | 75-46-7 |
| Gas Linear Chemical Formula | CHF3 |
| Gas Quantity | 0.0228 (Metric Tons) |
| Own Result? | |
Subpart I Fab Details (for Building 2):
| Unique Name/Identifier | Building 2 |
| Optional Description | |
| What does the fab manufacture? [§98.96] | Semiconductor |
| Method used to calculate f-GHG emissions for this fab from the plasma etch/wafer clean and chamber clean process types [§98.96(d)] | DefaultEmissionFactors |
| Does the fab have abatement systems (as defined in 98.98) through which F-GHG or N2O flow? | Yes |
| Is the fab claiming destruction or removal efficiency for those abatement systems (as defined in 98.98) at the fab? [§98.96(p)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (Greater than 300 mm) [§98.96(b)] | No |
| What Is the Diameter of the Wafers Manufactured at this Fab? (300 mm) [§98.96(b)] | No |
| What Is the Diameter of the Wafers Manufactured at this Fab? (200 mm) [§98.96(b)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (150 mm) [§98.96(b)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (Less than 150 mm) [§98.96(b)] | No |
| List the Specific Wafer Size(s) Less than 150mm Manufactured at this Fab [§98.96(b)] | |
| Annual Manufacturing Capacity at this Fab used in Equation I-5 (square meters) [§98.96(a)] | |
| Annual production for this fab in terms of substrate surface area (e.g., silicon, PV-cell, glass) (square meters) [§98.96(e)] | |
| Do the emissions for this fab include emissions from research and development activities, as defined in 98.6? | Yes |
| What is the approximate percentage of total GHG emissions, on a metric ton CO2e basis, that are attributable to research and development activities? [§98.96(x)] | less than 5 percent |
| What is the effective fab-wide destruction or removal efficiency value calculated using Equations I-26, I-27 and I-28, as appropriate? (decimal fraction) [§98.96(r)] | 0.3118 |
| What method was used for this fab to develop the apportioning factors for fluorinated GHG and N20 consumption? [§98.96(m)(1)] | |
| Optional description of your system and method(s) used in the fab-specific apportioning model | |
| Description of quantifiable metric used in engineering model to apportion gas consumption [§98.96(m)(1)] | |
| Start date selected under 98.94(c)(2)(i). [§98.96(m)(2)] | 2020-01-01 |
| End date selected under 98.94(c)(2)(i). [§98.96(m)(2)] | 2020-12-31 |
| Certification that the gas(es) selected under 98.94(c)(2)(ii) for this fab corresponds to the largest quantity(ies) consumed, on a mass basis, of fluorinated GHG used at the fab in the reporting year which the facility is required to apportion. Note that if you compare the actual gas consumed to the modeled gas consumed for two fluorinated GHGs, you must certify that one of the fluorinated GHGs selected for comparison corresponds to the largest quantity consumed, on a mass basis, of fluorinated GHGs used at the fab that requires apportionment during the reporting year. [§98.96(m)(3)] | Certified |
| Reason for "not certified" selection (optional) | |
| Result of calculation comparing actual and modeled gas consumption under §98.94(c)(2)(v) (the percent difference between actual and modeled gas consumption, relative to actual gas consumption). [§98.96(m)(4)] | 7.5 |
| If you are required to apportion f-GHG consumption between fabs, as required by 98.94(c)(2)(v), certification that the gas(es) you selected under §98.94(c)(2)(ii) correspond(s) to the largest quantities consumed on a mass basis, of f-GHG used at your facility during the reporting year for which you are required to apportion. [§98.96(m)(5)] | Certified |
| Reason for "not certified" selection (optional) | |
N2O Emissions Details
| Method of reporting N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(d)] | Used default utilization factor from Table I-8 |
| Total annual N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(c)(3)] | 13.005 |
| Method of reporting N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(d)] | Used default utilization factor from Table I-8 |
| Total annual N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(c)(3)] | 0.203 |
Substrate Types Details
| Substrate Type | |
| "Other" Substrate Type | |
| The Annual production in terms of substrate surface area for each fab (square meters) [§98.96(e)] | |
F-GHG Emissions Details
| Unique Name/Identifier | HFC-23 |
| Chemical Formula [98.96(c)(1)] | CHF3 |
| Cas Number [98.96(c)(1)] | 75-46-7 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | HFC-23 |
| Gas Description | |
| Cas Number | 75-46-7 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.00798 |
| Unique Name/Identifier | Nitrogen trifluoride |
| Chemical Formula [98.96(c)(1)] | NF3 |
| Cas Number [98.96(c)(1)] | 7783-54-2 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | Nitrogen trifluoride |
| Gas Description | |
| Cas Number | 7783-54-2 |
| Process Type | Chamber cleaning - remote plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.0028 |
| Unique Name/Identifier | PFC-116 (Perfluoroethane) |
| Chemical Formula [98.96(c)(1)] | C2F6 |
| Cas Number [98.96(c)(1)] | 76-16-4 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | PFC-116 (Perfluoroethane) |
| Gas Description | |
| Cas Number | 76-16-4 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.294 |
| Unique Name/Identifier | PFC-14 (Perfluoromethane) |
| Chemical Formula [98.96(c)(1)] | CF4 |
| Cas Number [98.96(c)(1)] | 75-73-0 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas Description | |
| Cas Number | 75-73-0 |
| Process Type | Chamber cleaning - remote plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.0209 |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas Description | |
| Cas Number | 75-73-0 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.287 |
| Unique Name/Identifier | Sulfur hexafluoride |
| Chemical Formula [98.96(c)(1)] | SF6 |
| Cas Number [98.96(c)(1)] | 2551-62-4 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | Sulfur hexafluoride |
| Gas Description | |
| Cas Number | 2551-62-4 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 1.035 |
F-HTF Emissions Details
| F-HTF [§98.96(c)(4)] | FC-770 (Perfluoroisopropylmorpholine) |
| Chemical Formula [§98.96(c)(4)] | C5F15NO |
| Cas Number [§98.96(c)(4)] | 1093615-61-2 |
| F-HTF Category [§98.96(c)(4)] | Fully fluorinated GHGs |
| Total Annual Emissions (metric tons) [§98.96(c)(4)] | 0.669 |
| Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)] | No |
| How many times were missing data procedures followed in this reporting year? [§98.96(s)] | 0 |
| What method was used to estimate the missing data? [§98.96(s)] | |
Abatement Systems Details
| Abatement System Name/Identifier | DAS Strax |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | B2 LAM4720_02_20210323_DRE Confirmation Letter_STYRAX INLINE A32-19-7375_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | B2 LAM4720_02_20210323_DRE Confirmation Letter_STYRAX INLINE A32-19-7375_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | B2 LAM9400_04_20210323_DRE Confirmation Letter_STYRAX INLINE A32-18-5968_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Abatement System Name/Identifier | Ebara G5 |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001444_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001484_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001790_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
Subpart I Fab Details (for Building 4):
| Unique Name/Identifier | Building 4 |
| Optional Description | |
| What does the fab manufacture? [§98.96] | Semiconductor |
| Method used to calculate f-GHG emissions for this fab from the plasma etch/wafer clean and chamber clean process types [§98.96(d)] | DefaultEmissionFactors |
| Does the fab have abatement systems (as defined in 98.98) through which F-GHG or N2O flow? | Yes |
| Is the fab claiming destruction or removal efficiency for those abatement systems (as defined in 98.98) at the fab? [§98.96(p)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (Greater than 300 mm) [§98.96(b)] | No |
| What Is the Diameter of the Wafers Manufactured at this Fab? (300 mm) [§98.96(b)] | No |
| What Is the Diameter of the Wafers Manufactured at this Fab? (200 mm) [§98.96(b)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (150 mm) [§98.96(b)] | Yes |
| What Is the Diameter of the Wafers Manufactured at this Fab? (Less than 150 mm) [§98.96(b)] | No |
| List the Specific Wafer Size(s) Less than 150mm Manufactured at this Fab [§98.96(b)] | |
| Annual Manufacturing Capacity at this Fab used in Equation I-5 (square meters) [§98.96(a)] | |
| Annual production for this fab in terms of substrate surface area (e.g., silicon, PV-cell, glass) (square meters) [§98.96(e)] | |
| Do the emissions for this fab include emissions from research and development activities, as defined in 98.6? | Yes |
| What is the approximate percentage of total GHG emissions, on a metric ton CO2e basis, that are attributable to research and development activities? [§98.96(x)] | less than 5 percent |
| What is the effective fab-wide destruction or removal efficiency value calculated using Equations I-26, I-27 and I-28, as appropriate? (decimal fraction) [§98.96(r)] | 0.559 |
| What method was used for this fab to develop the apportioning factors for fluorinated GHG and N20 consumption? [§98.96(m)(1)] | |
| Optional description of your system and method(s) used in the fab-specific apportioning model | |
| Description of quantifiable metric used in engineering model to apportion gas consumption [§98.96(m)(1)] | |
| Start date selected under 98.94(c)(2)(i). [§98.96(m)(2)] | 2020-01-01 |
| End date selected under 98.94(c)(2)(i). [§98.96(m)(2)] | 2020-12-31 |
| Certification that the gas(es) selected under 98.94(c)(2)(ii) for this fab corresponds to the largest quantity(ies) consumed, on a mass basis, of fluorinated GHG used at the fab in the reporting year which the facility is required to apportion. Note that if you compare the actual gas consumed to the modeled gas consumed for two fluorinated GHGs, you must certify that one of the fluorinated GHGs selected for comparison corresponds to the largest quantity consumed, on a mass basis, of fluorinated GHGs used at the fab that requires apportionment during the reporting year. [§98.96(m)(3)] | Certified |
| Reason for "not certified" selection (optional) | |
| Result of calculation comparing actual and modeled gas consumption under §98.94(c)(2)(v) (the percent difference between actual and modeled gas consumption, relative to actual gas consumption). [§98.96(m)(4)] | 4.5 |
| If you are required to apportion f-GHG consumption between fabs, as required by 98.94(c)(2)(v), certification that the gas(es) you selected under §98.94(c)(2)(ii) correspond(s) to the largest quantities consumed on a mass basis, of f-GHG used at your facility during the reporting year for which you are required to apportion. [§98.96(m)(5)] | Certified |
| Reason for "not certified" selection (optional) | |
N2O Emissions Details
| Method of reporting N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(d)] | Used default utilization factor from Table I-8 |
| Total annual N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(c)(3)] | 0.358 |
| Method of reporting N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(d)] | Used default utilization factor from Table I-8 |
| Total annual N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(c)(3)] | 0.433 |
Substrate Types Details
| Substrate Type | |
| "Other" Substrate Type | |
| The Annual production in terms of substrate surface area for each fab (square meters) [§98.96(e)] | |
F-GHG Emissions Details
| Unique Name/Identifier | HFC-23 |
| Chemical Formula [98.96(c)(1)] | CHF3 |
| Cas Number [98.96(c)(1)] | 75-46-7 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | HFC-23 |
| Gas Description | |
| Cas Number | 75-46-7 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.0148 |
| Unique Name/Identifier | Nitrogen trifluoride |
| Chemical Formula [98.96(c)(1)] | NF3 |
| Cas Number [98.96(c)(1)] | 7783-54-2 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | Nitrogen trifluoride |
| Gas Description | |
| Cas Number | 7783-54-2 |
| Process Type | Chamber cleaning - in situ plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.00342 |
| Gas Name | Nitrogen trifluoride |
| Gas Description | |
| Cas Number | 7783-54-2 |
| Process Type | Chamber cleaning - remote plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.0109 |
| Unique Name/Identifier | Perfluorocyclobutane |
| Chemical Formula [98.96(c)(1)] | C-C4F8 |
| Cas Number [98.96(c)(1)] | 115-25-3 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | Perfluorocyclobutane |
| Gas Description | |
| Cas Number | 115-25-3 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.0106 |
| Unique Name/Identifier | PFC C-1418 |
| Chemical Formula [98.96(c)(1)] | c-C5F8 |
| Cas Number [98.96(c)(1)] | 559-40-0 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | PFC C-1418 |
| Gas Description | |
| Cas Number | 559-40-0 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.00066 |
| Unique Name/Identifier | PFC-116 (Perfluoroethane) |
| Chemical Formula [98.96(c)(1)] | C2F6 |
| Cas Number [98.96(c)(1)] | 76-16-4 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | PFC-116 (Perfluoroethane) |
| Gas Description | |
| Cas Number | 76-16-4 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.64116 |
| Unique Name/Identifier | PFC-14 (Perfluoromethane) |
| Chemical Formula [98.96(c)(1)] | CF4 |
| Cas Number [98.96(c)(1)] | 75-73-0 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas Description | |
| Cas Number | 75-73-0 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.917 |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas Description | |
| Cas Number | 75-73-0 |
| Process Type | Chamber cleaning - in situ plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.00095 |
| Gas Name | PFC-14 (Perfluoromethane) |
| Gas Description | |
| Cas Number | 75-73-0 |
| Process Type | Chamber cleaning - remote plasma |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 0.03229 |
| Unique Name/Identifier | Sulfur hexafluoride |
| Chemical Formula [98.96(c)(1)] | SF6 |
| Cas Number [98.96(c)(1)] | 2551-62-4 |
| Gas Category [98.96(c)(1)] | |
| Gas Name | Sulfur hexafluoride |
| Gas Description | |
| Cas Number | 2551-62-4 |
| Process Type | Plasma etching / Wafer cleaning |
| Calculation Method | Used default factors |
| Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)] | 2.768 |
F-HTF Emissions Details
| F-HTF [§98.96(c)(4)] | FC-770 (Perfluoroisopropylmorpholine) |
| Chemical Formula [§98.96(c)(4)] | C5F15NO |
| Cas Number [§98.96(c)(4)] | 1093615-61-2 |
| F-HTF Category [§98.96(c)(4)] | Fully fluorinated GHGs |
| Total Annual Emissions (metric tons) [§98.96(c)(4)] | 0.669 |
| Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)] | No |
| How many times were missing data procedures followed in this reporting year? [§98.96(s)] | 0 |
| What method was used to estimate the missing data? [§98.96(s)] | |
Abatement Systems Details
| Abatement System Name/Identifier | Airgard Encompass |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1028-EQHS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1049-EQS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Perfluorocyclobutane |
| DRE Claimed Gas CAS Number | 115-25-3 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1050-EQHS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC C-1418 |
| DRE Claimed Gas CAS Number | 559-40-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1055-EQHS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1028-EQHS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | 1049-EQS Encompass design specification.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Abatement System Name/Identifier | DAS Styrax |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | B2 LAM4720_02_20210323_DRE Confirmation Letter_STYRAX INLINE A32-19-7375_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | B2 LAM9400_04_20210323_DRE Confirmation Letter_STYRAX INLINE A32-18-5968_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Perfluorocyclobutane |
| DRE Claimed Gas CAS Number | 115-25-3 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | LAM2300_01_20210323_DRE Confirmation Letter_STYRAX INLINE A32-17-5380_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC C-1418 |
| DRE Claimed Gas CAS Number | 559-40-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | LAM4720_48_20210323_DRE Confirmation Letter_STYRAX INLINE A32-19-7376_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | LAM9400_47_20210323_DRE Confirmation Letter_STYRAX INLINE A32-16-4619_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | LAM9400_48_20210323_DRE Confirmation Letter_STYRAX INLINE A32-17-5383_rev2.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Abatement System Name/Identifier | DAS Twice |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Perfluorocyclobutane |
| DRE Claimed Gas CAS Number | 115-25-3 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC C-1418 |
| DRE Claimed Gas CAS Number | 559-40-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | Centura_01_20210324_DRE Confirmation Letter_STYRAX TWICE A33-18-5970_rev2 (1).pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Abatement System Name/Identifier | Ebara G5 |
| Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)] | |
| Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)] | |
| Certification in accordance with plan | Certified |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | HFC-23 |
| DRE Claimed Gas CAS Number | 75-46-7 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001444_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Nitrogen trifluoride |
| DRE Claimed Gas CAS Number | 7783-54-2 |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001484_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Perfluorocyclobutane |
| DRE Claimed Gas CAS Number | 115-25-3 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001513_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC C-1418 |
| DRE Claimed Gas CAS Number | 559-40-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001962_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-116 (Perfluoroethane) |
| DRE Claimed Gas CAS Number | 76-16-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | PFC-14 (Perfluoromethane) |
| DRE Claimed Gas CAS Number | 75-73-0 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001962_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - in situ plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Chamber cleaning - remote plasma |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | Sulfur hexafluoride |
| DRE Claimed Gas CAS Number | 2551-62-4 |
| Process Type/Sub-Type | Plasma etching / Wafer cleaning |
| Is DRE Claimed | true |
| Basis of DRE [98.96(q)(2)] | Default DRE |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | CertificationofDesign_GSeries _Broadcom_DC001962_20210302.pdf |
| Number of Abatement System Controlling Emissions | |
DRE Information By Gas And Process Type
| DRE Claimed Gas Name | N2O |
| DRE Claimed Gas CAS Number | 10024-97-2 |
| Process Type/Sub-Type | Chemical Vapor Deposition |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |
| Process Type/Sub-Type | Other Electronics Manufacturing Processes |
| Is DRE Claimed | false |
| Basis of DRE [98.96(q)(2)] | |
| Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination | |
| Number of Abatement System Controlling Emissions | |