Facility Name: Avago Technologies
Facility Identifier:
Facility Reporting Year: 2015
Facility Location:
Address: 4380 Ziegler Road
City: Fort Collins
State: CO
Postal Code: 80525

Facility Site Details:
CO2 equivalent emissions from facility subparts C-II, SS, and TT (metric tons): 291,939.9
CO2 equivalent emissions from supplier subparts LL-QQ (metric tons):
Biogenic CO2 emissions from facility subparts C-II, SS, and TT (metric tons): 0
Cogeneration Unit Emissions Indicator: N
GHG Report Start Date: 2015-01-01
GHG Report End Date: 2015-12-31
Description of Changes to Calculation Methodology:
Did you use an EPA-approved BAMM in this reporting year for Subpart I?
Plant Code Indicator: N
Primary NAICS Code: 334413
Second Primary NAICS Code:

Parent Company Details:
Parent Company Name: AVAGO TECHNOLOGIES US INC
Address: 1320 Ridder Park Drive, San Jose,  CA 95131
Percent Ownership Interest: 100

Subpart C: General Stationary Fuel Combustion

Gas Information Details

Gas NameCarbon Dioxide
Gas Quantity10,846.8 (Metric Tons)
Own Result?

Gas NameBiogenic Carbon dioxide
Gas Quantity0 (Metric Tons)
Own Result?

Gas NameMethane
Gas Quantity0.2 (Metric Tons)
Own Result?

Gas NameNitrous Oxide
Gas Quantity0.02 (Metric Tons)
Own Result?

Unit Details:
Unit Name : CP-site
Unit Type : OCS (Other combustion source)
Unit Description :
Other Unit Name :
Common Pipe Details:
Use Ivt Indicator: N
Maximum Rated Heat Input Capacity: 33.5
Cumulative Maximum Rated Heat Input Capacity:

Emission Details:
Annual Biogenic CO2 Emissions: 0 (metric tons)
Annual Fossil fuel based CO2 Emissions: 10955.6 (metric tons)

Tier Fuel Details:
Fuel : Natural Gas (Weighted U.S. Average)
Tier Name : Tier 1 (Equation C-1b, natural gas billing in mmBtu)
Tier Methodology Start Date : 2015-01-01
Tier Methodology End Date : 2015-12-31

Fuel Emission Details :
Total CO2 emissionsTotal CH4 emissionsTotal N2O emissionsTotal CH4 emissions CO2eTotal N2O emissions CO2e
10846.8 (Metric Tons) 0.20 (Metric Tons) 0.020 (Metric Tons) 5.1 (Metric Tons) 6.1 (Metric Tons)

Equation C1b/C8b Inputs :
Natural Gas Usage : 204425 (mmBtu/year)


Subpart I: Electronics Manufacturing

Gas Information Details

Gas NameNitrous Oxide
Gas Quantity11.211 (Metric Tons)
Own Result?

Gas NamePerfluorocyclobutane
Gas Quantity0.1196 (Metric Tons)
Own Result?

Gas NameOther
Other Gas NameFC-770 (Perfluoroisopropylmorpholine)
Other Gas GHG GroupFully fluorinated GHGs
Gas Quantity1.4242 (Metric Tons)
Own Result?

Gas NameNitrogen trifluoride
Gas Quantity0.2102 (Metric Tons)
Own Result?

Gas NameHFC-23
Gas Quantity0.159 (Metric Tons)
Own Result?

Gas NamePFC-14 (Perfluoromethane)
Gas Quantity2.0997 (Metric Tons)
Own Result?

Gas NamePFC-116 (Perfluoroethane)
Gas Quantity2.8945 (Metric Tons)
Own Result?

Gas NamePFC C-1418
Gas Quantity0.0074 (Metric Tons)
Own Result?

Gas NameSulfur hexafluoride
Gas Quantity9.0118 (Metric Tons)
Own Result?


Subpart I Fab Details (for Building 2):
Unique Name/IdentifierBuilding 2
Optional Description
What does the fab manufacture? [§98.96]Semiconductor
Method used to calculate f-GHG emissions for this fab from the plasma etch/wafer clean and chamber clean process types [§98.96(d)]DefaultEmissionFactors
Does the fab have abatement systems (as defined in 98.98) through which F-GHG or N2O flow?Yes
Is the fab claiming destruction or removal efficiency for those abatement systems (as defined in 98.98) at the fab? [§98.96(p)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (Greater than 300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (200 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (150 mm) [§98.96(b)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (Less than 150 mm) [§98.96(b)]No
List the Specific Wafer Size(s) Less than 150mm Manufactured at this Fab [§98.96(b)]
Annual Manufacturing Capacity at this Fab used in Equation I-5 (square meters) [§98.96(a)]
Annual production for this fab in terms of substrate surface area (e.g., silicon, PV-cell, glass) (square meters) [§98.96(e)]
Do the emissions for this fab include emissions from research and development activities, as defined in 98.6?No
What is the approximate percentage of total GHG emissions, on a metric ton CO2e basis, that are attributable to research and development activities? [§98.96(x)]
What is the effective fab-wide destruction or removal efficiency value calculated using Equations I-26, I-27 and I-28, as appropriate? (decimal fraction) [§98.96(r)]0.2939
What method was used for this fab to develop the apportioning factors for fluorinated GHG and N20 consumption? [§98.96(m)(1)]
Optional description of your system and method(s) used in the fab-specific apportioning model
Description of quantifiable metric used in engineering model to apportion gas consumption [§98.96(m)(1)]
Start date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2015-01-01
End date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2015-12-31
Certification that the gas(es) selected under 98.94(c)(2)(ii) for this fab corresponds to the largest quantity(ies) consumed, on a mass basis, of fluorinated GHG used at the fab in the reporting year which the facility is required to apportion. Note that if you compare the actual gas consumed to the modeled gas consumed for two fluorinated GHGs, you must certify that one of the fluorinated GHGs selected for comparison corresponds to the largest quantity consumed, on a mass basis, of fluorinated GHGs used at the fab that requires apportionment during the reporting year. [§98.96(m)(3)]Certified
Reason for "not certified" selection (optional)
Result of calculation comparing actual and modeled gas consumption under §98.94(c)(2)(v) (the percent difference between actual and modeled gas consumption, relative to actual gas consumption). [§98.96(m)(4)]6.95
If you are required to apportion f-GHG consumption between fabs, as required by 98.94(c)(2)(v), certification that the gas(es) you selected under §98.94(c)(2)(ii) correspond(s) to the largest quantities consumed on a mass basis, of f-GHG used at your facility during the reporting year for which you are required to apportion. [§98.96(m)(5)]Certified
Reason for "not certified" selection (optional)


N2O Emissions Details
Method of reporting N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(d)]Used default utilization factor from Table I-8
Total annual N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(c)(3)]10.3735
Method of reporting N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(d)]Used default utilization factor from Table I-8
Total annual N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(c)(3)]0.0050


F-GHG Emissions Details
Unique Name/IdentifierHFC-23
Chemical Formula [98.96(c)(1)]CHF3
Cas Number [98.96(c)(1)]75-46-7
Gas Category [98.96(c)(1)]
Gas NameHFC-23
Gas Description
Cas Number75-46-7
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.1041
Gas NameHFC-23
Gas Description
Cas Number75-46-7
Process TypeChamber cleaning - in situ plasma
Calculation MethodAssumed utilization/by-product formation rates = 0
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.0003
Unique Name/IdentifierNitrogen trifluoride
Chemical Formula [98.96(c)(1)]NF3
Cas Number [98.96(c)(1)]7783-54-2
Gas Category [98.96(c)(1)]
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - in situ thermal
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.004
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - remote plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.004
Unique Name/IdentifierPerfluorocyclobutane
Chemical Formula [98.96(c)(1)]C-C4F8
Cas Number [98.96(c)(1)]115-25-3
Gas Category [98.96(c)(1)]
Gas NamePerfluorocyclobutane
Gas Description
Cas Number115-25-3
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.0001
Unique Name/IdentifierPFC C-1418
Chemical Formula [98.96(c)(1)]c-C5F8
Cas Number [98.96(c)(1)]559-40-0
Gas Category [98.96(c)(1)]
Gas NamePFC C-1418
Gas Description
Cas Number559-40-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.000040
Unique Name/IdentifierPFC-116 (Perfluoroethane)
Chemical Formula [98.96(c)(1)]C2F6
Cas Number [98.96(c)(1)]76-16-4
Gas Category [98.96(c)(1)]
Gas NamePFC-116 (Perfluoroethane)
Gas Description
Cas Number76-16-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.58
Gas NamePFC-116 (Perfluoroethane)
Gas Description
Cas Number76-16-4
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]1.16
Unique Name/IdentifierPFC-14 (Perfluoromethane)
Chemical Formula [98.96(c)(1)]CF4
Cas Number [98.96(c)(1)]75-73-0
Gas Category [98.96(c)(1)]
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.5697
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.38
Unique Name/IdentifierSulfur hexafluoride
Chemical Formula [98.96(c)(1)]SF6
Cas Number [98.96(c)(1)]2551-62-4
Gas Category [98.96(c)(1)]
Gas NameSulfur hexafluoride
Gas Description
Cas Number2551-62-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]2.2810
Gas NameSulfur hexafluoride
Gas Description
Cas Number2551-62-4
Process TypeChamber cleaning - in situ plasma
Calculation MethodAssumed utilization/by-product formation rates = 0
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.7493


F-HTF Emissions Details
F-HTF [§98.96(c)(4)]FC-770 (Perfluoroisopropylmorpholine)
Chemical Formula [§98.96(c)(4)]C5F15NO
Cas Number [§98.96(c)(4)]1093615-61-2
F-HTF Category [§98.96(c)(4)]Fully fluorinated GHGs
Total Annual Emissions (metric tons) [§98.96(c)(4)]0.5264
Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)]No
How many times were missing data procedures followed in this reporting year? [§98.96(s)]0
What method was used to estimate the missing data? [§98.96(s)]


Abatement Systems Details
Abatement System Name/IdentifierNovellus D1 and D3 PFC Abatement
Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)]
Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)]
Certification in accordance with planCertified


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-23
DRE Claimed Gas CAS Number75-46-7


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001444.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameNitrogen trifluoride
DRE Claimed Gas CAS Number7783-54-2


Process Type/Sub-TypeChamber cleaning - in situ thermal
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorocyclobutane
DRE Claimed Gas CAS Number115-25-3


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC C-1418
DRE Claimed Gas CAS Number559-40-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001444.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-116 (Perfluoroethane)
DRE Claimed Gas CAS Number76-16-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001444.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-14 (Perfluoromethane)
DRE Claimed Gas CAS Number75-73-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001444.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameSulfur hexafluoride
DRE Claimed Gas CAS Number2551-62-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameN2O
DRE Claimed Gas CAS Number10024-97-2


Process Type/Sub-TypeChemical Vapor Deposition
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeOther Electronics Manufacturing Processes
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions



Abatement System Name/IdentifierNovellus D2 PFC Abatement
Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)]
Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)]
Certification in accordance with planCertified


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-23
DRE Claimed Gas CAS Number75-46-7


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001484.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameNitrogen trifluoride
DRE Claimed Gas CAS Number7783-54-2


Process Type/Sub-TypeChamber cleaning - in situ thermal
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorocyclobutane
DRE Claimed Gas CAS Number115-25-3


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001484.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC C-1418
DRE Claimed Gas CAS Number559-40-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001484.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-116 (Perfluoroethane)
DRE Claimed Gas CAS Number76-16-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001484.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-14 (Perfluoromethane)
DRE Claimed Gas CAS Number75-73-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationCertificationofDesign_GSeries _Avago_DC001484.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameSulfur hexafluoride
DRE Claimed Gas CAS Number2551-62-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameN2O
DRE Claimed Gas CAS Number10024-97-2


Process Type/Sub-TypeChemical Vapor Deposition
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeOther Electronics Manufacturing Processes
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions





Subpart I Fab Details (for Building 4):
Unique Name/IdentifierBuilding 4
Optional Description
What does the fab manufacture? [§98.96]Semiconductor
Method used to calculate f-GHG emissions for this fab from the plasma etch/wafer clean and chamber clean process types [§98.96(d)]DefaultEmissionFactors
Does the fab have abatement systems (as defined in 98.98) through which F-GHG or N2O flow?Yes
Is the fab claiming destruction or removal efficiency for those abatement systems (as defined in 98.98) at the fab? [§98.96(p)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (Greater than 300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (300 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (200 mm) [§98.96(b)]No
What Is the Diameter of the Wafers Manufactured at this Fab? (150 mm) [§98.96(b)]Yes
What Is the Diameter of the Wafers Manufactured at this Fab? (Less than 150 mm) [§98.96(b)]No
List the Specific Wafer Size(s) Less than 150mm Manufactured at this Fab [§98.96(b)]
Annual Manufacturing Capacity at this Fab used in Equation I-5 (square meters) [§98.96(a)]
Annual production for this fab in terms of substrate surface area (e.g., silicon, PV-cell, glass) (square meters) [§98.96(e)]
Do the emissions for this fab include emissions from research and development activities, as defined in 98.6?No
What is the approximate percentage of total GHG emissions, on a metric ton CO2e basis, that are attributable to research and development activities? [§98.96(x)]
What is the effective fab-wide destruction or removal efficiency value calculated using Equations I-26, I-27 and I-28, as appropriate? (decimal fraction) [§98.96(r)]0.2336
What method was used for this fab to develop the apportioning factors for fluorinated GHG and N20 consumption? [§98.96(m)(1)]
Optional description of your system and method(s) used in the fab-specific apportioning model
Description of quantifiable metric used in engineering model to apportion gas consumption [§98.96(m)(1)]
Start date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2015-01-01
End date selected under 98.94(c)(2)(i). [§98.96(m)(2)]2015-12-31
Certification that the gas(es) selected under 98.94(c)(2)(ii) for this fab corresponds to the largest quantity(ies) consumed, on a mass basis, of fluorinated GHG used at the fab in the reporting year which the facility is required to apportion. Note that if you compare the actual gas consumed to the modeled gas consumed for two fluorinated GHGs, you must certify that one of the fluorinated GHGs selected for comparison corresponds to the largest quantity consumed, on a mass basis, of fluorinated GHGs used at the fab that requires apportionment during the reporting year. [§98.96(m)(3)]Certified
Reason for "not certified" selection (optional)
Result of calculation comparing actual and modeled gas consumption under §98.94(c)(2)(v) (the percent difference between actual and modeled gas consumption, relative to actual gas consumption). [§98.96(m)(4)]1
If you are required to apportion f-GHG consumption between fabs, as required by 98.94(c)(2)(v), certification that the gas(es) you selected under §98.94(c)(2)(ii) correspond(s) to the largest quantities consumed on a mass basis, of f-GHG used at your facility during the reporting year for which you are required to apportion. [§98.96(m)(5)]Certified
Reason for "not certified" selection (optional)


N2O Emissions Details
Method of reporting N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(d)]Used default utilization factor from Table I-8
Total annual N2O emissions from chemical vapor deposition as calculated in Equation I-10 [§98.96(c)(3)]0.6232
Method of reporting N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(d)]Used default utilization factor from Table I-8
Total annual N2O emissions from electronic manufacturing processes as calculated in Equation I-11 [§98.96(c)(3)]0.2094


F-GHG Emissions Details
Unique Name/IdentifierHFC-23
Chemical Formula [98.96(c)(1)]CHF3
Cas Number [98.96(c)(1)]75-46-7
Gas Category [98.96(c)(1)]
Gas NameHFC-23
Gas Description
Cas Number75-46-7
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.0546
Unique Name/IdentifierNitrogen trifluoride
Chemical Formula [98.96(c)(1)]NF3
Cas Number [98.96(c)(1)]7783-54-2
Gas Category [98.96(c)(1)]
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - in situ thermal
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.199
Gas NameNitrogen trifluoride
Gas Description
Cas Number7783-54-2
Process TypeChamber cleaning - remote plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.0032
Unique Name/IdentifierPerfluorocyclobutane
Chemical Formula [98.96(c)(1)]C-C4F8
Cas Number [98.96(c)(1)]115-25-3
Gas Category [98.96(c)(1)]
Gas NamePerfluorocyclobutane
Gas Description
Cas Number115-25-3
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.1195
Unique Name/IdentifierPFC C-1418
Chemical Formula [98.96(c)(1)]c-C5F8
Cas Number [98.96(c)(1)]559-40-0
Gas Category [98.96(c)(1)]
Gas NamePFC C-1418
Gas Description
Cas Number559-40-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.0074
Unique Name/IdentifierPFC-116 (Perfluoroethane)
Chemical Formula [98.96(c)(1)]C2F6
Cas Number [98.96(c)(1)]76-16-4
Gas Category [98.96(c)(1)]
Gas NamePFC-116 (Perfluoroethane)
Gas Description
Cas Number76-16-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]1.1545
Unique Name/IdentifierPFC-14 (Perfluoromethane)
Chemical Formula [98.96(c)(1)]CF4
Cas Number [98.96(c)(1)]75-73-0
Gas Category [98.96(c)(1)]
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]1.15
Gas NamePFC-14 (Perfluoromethane)
Gas Description
Cas Number75-73-0
Process TypeChamber cleaning - in situ plasma
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0
Unique Name/IdentifierSulfur hexafluoride
Chemical Formula [98.96(c)(1)]SF6
Cas Number [98.96(c)(1)]2551-62-4
Gas Category [98.96(c)(1)]
Gas NameSulfur hexafluoride
Gas Description
Cas Number2551-62-4
Process TypePlasma etching / Wafer cleaning
Calculation MethodUsed default factors
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]5.6071
Gas NameSulfur hexafluoride
Gas Description
Cas Number2551-62-4
Process TypeChamber cleaning - in situ plasma
Calculation MethodAssumed utilization/by-product formation rates = 0
Annual emissions for this F-GHG - Process Type - Calculation Method (metric tons) [98.96(c)(1)]0.3744


F-HTF Emissions Details
F-HTF [§98.96(c)(4)]FC-770 (Perfluoroisopropylmorpholine)
Chemical Formula [§98.96(c)(4)]C5F15NO
Cas Number [§98.96(c)(4)]1093615-61-2
F-HTF Category [§98.96(c)(4)]Fully fluorinated GHGs
Total Annual Emissions (metric tons) [§98.96(c)(4)]0.8978
Were missing data procedures used to estimate inputs into the fluorinated heat transfer fluid mass balance equation under $98.95(b)? [§98.96(s)]No
How many times were missing data procedures followed in this reporting year? [§98.96(s)]0
What method was used to estimate the missing data? [§98.96(s)]


Abatement Systems Details
Abatement System Name/IdentifierDurian
Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)]
Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)]
Certification in accordance with planCertified


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-23
DRE Claimed Gas CAS Number75-46-7


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationDRE PERFORMANCE - Durian for Avago Submitted.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameNitrogen trifluoride
DRE Claimed Gas CAS Number7783-54-2


Process Type/Sub-TypeChamber cleaning - in situ thermal
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorocyclobutane
DRE Claimed Gas CAS Number115-25-3


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC C-1418
DRE Claimed Gas CAS Number559-40-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-116 (Perfluoroethane)
DRE Claimed Gas CAS Number76-16-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationDRE PERFORMANCE - Durian for Avago Submitted.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-14 (Perfluoromethane)
DRE Claimed Gas CAS Number75-73-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationDRE PERFORMANCE - Durian for Avago Submitted.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameSulfur hexafluoride
DRE Claimed Gas CAS Number2551-62-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationDRE PERFORMANCE - Durian for Avago Submitted.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationDRE PERFORMANCE - Durian for Avago Submitted.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameN2O
DRE Claimed Gas CAS Number10024-97-2


Process Type/Sub-TypeChemical Vapor Deposition
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeOther Electronics Manufacturing Processes
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions



Abatement System Name/IdentifierEbara for LAM 9400_43
Certification that the site maintenance plan for abatement systems for which emissions are being reported contains manufacturer’s recommendations and specifications for installation, operation, and maintenance for each abatement system. [§98.96(q)]
Certification that the abatement systems for which emissions are being reported and for which default DRE are being used were specifically designed for fluorinated GHG and N2O abatement, as applicable. [§98.96(q)]
Certification in accordance with planCertified


DRE Information By Gas And Process Type
DRE Claimed Gas NameHFC-23
DRE Claimed Gas CAS Number75-46-7


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameNitrogen trifluoride
DRE Claimed Gas CAS Number7783-54-2


Process Type/Sub-TypeChamber cleaning - in situ thermal
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - remote plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePerfluorocyclobutane
DRE Claimed Gas CAS Number115-25-3


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC C-1418
DRE Claimed Gas CAS Number559-40-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-116 (Perfluoroethane)
DRE Claimed Gas CAS Number76-16-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationLAM 9400_43 Ebara SF6 abatement.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NamePFC-14 (Perfluoromethane)
DRE Claimed Gas CAS Number75-73-0


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationLAM 9400_43 Ebara SF6 abatement.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameSulfur hexafluoride
DRE Claimed Gas CAS Number2551-62-4


Process Type/Sub-TypePlasma etching / Wafer cleaning
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationLAM 9400_43 Ebara SF6 abatement.pdf
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeChamber cleaning - in situ plasma
Is DRE Claimedtrue
Basis of DRE [98.96(q)(2)]Default DRE
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combinationLAM 9400_43 Ebara SF6 abatement.pdf
Number of Abatement System Controlling Emissions


DRE Information By Gas And Process Type
DRE Claimed Gas NameN2O
DRE Claimed Gas CAS Number10024-97-2


Process Type/Sub-TypeChemical Vapor Deposition
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions


Process Type/Sub-TypeOther Electronics Manufacturing Processes
Is DRE Claimedfalse
Basis of DRE [98.96(q)(2)]
Supplier documentation that indicates that the system is designed to abate F-GHG or N2O, if using the applicable default DRE for this gas and process combination
Number of Abatement System Controlling Emissions